GaN-on-Si IP developer ALLOS Semiconductors announced it is collaborating with with Prof. Ohkawa and his team at King Abdullah University of Science and Technology
(KAUST) to develop high efficiency nitride-based red LEDs on large diameter silicon
substrates.

Prof. Ohkawa and team have developed an indium gallium nitride (InGaN)-
based red LED stack with low forward voltage of less than 2.5 V and high efficiency by using
local strain compensation and a modified MOCVD reactor design. ALLOS and the KAUST team will combine their unique technologies to handle strain and optimize crystal growth conditions for GaN-on-Si and red LEDs. To this end, the KAUST team will grow its red LED stack on top of ALLOS’ GaN-on-Si-buffer layers, which will be fine-tuned during the collaboration to optimize the performance of KAUST’s red LED stack.