Israel-based display characterization and inspection equipment maker InZiv has recently announced the shipment of a high-resolution pixel characterization tool to an undisclosed Tier-1 consumer electronics company.

InZiv’s tool offers MicroLED defect detection on the wafer and pixel level with unprecedented sub-micron resolutions. Measuring luminescence, spectral wavelengths and 3D structure at the highest resolutions, the equipment enables the identification and the source of defects, accelerating product time to market.

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Fig.1 Example use case for printed electrochromics: a shock detector smart label with an interactive printed interface.

Expanding Need for Simple Electronic Display Functionality

Rapid advances in the miniaturization and reduction of costs in computing, electronic sensing, and communications have allowed the integration of “smart” electronic functionality into almost everything. ”Intelligence” is now embedded into a wide range of everyday objects, and spread throughout our working and living environments. Much of this intelligence, data collection and transfer is hidden from the human senses, requiring little or no human involvement. But as the number of human daily touch points and interactions with smart devices grows, so too does the importance of user experience design and the role of displays.

German-based GaN-on-Si developer ALLOS has applied its technology to large 300 mm epiwafers. ALLOS says that scaling up to 300 mm wafers enables higher production efficiencies and thus lower costs. ALLOS estimates that the higher area utilization alone accounts for a cost advantage of 40% compared to standard LED wafers. Standard 300 mm silicon line tools also offer higher production uniformity and yield.

ALLOS demonstrated the 300 mm scale-up using a reactor made by Veeco who announced selling the first 300 mm GaN reactor to a leading-edge semiconductor fab just some month ago and also showed 300 mm wafer data at CES. ALLOS reports a wavelength uniformity of consistently below 1 nm and "all other production requirements like bow of < 40 µm and SEMI-standard thickness of 725 µm". ALLOS says scaling to 300 mm shows how robust its GaN-On-Si technology is.