Researchers from the National Chiao Tung University (NCTU) in Taiwan has been able to enhance the light-emitting intensity of Micro-LEDs by 143.7% by using ALD passivation layers. The researchers used ALD equipment produced by Finland-based Picosun.

Picosun says that its Micro-LED technology has "immense potential" to dirupt the solid state lighting market, and its ALD solutions has been proven to dramatically boost the efficiency of Micro-LEDs.

Researchers from Lehigh University, West Chester University, Osaka University and the University of Amsterdam developed a new technique to color-tune Gallium-Nitride (GaN) LEDs.

The new technique is based on Atomic Emission Manipulation under Current Injection. The researchers demonstrated that it is possible to attain red, green and blue emissions originating from just one GaN LED-structure that uses doping with a single type of rare earth ion, Europium (Eu).

In September 2018 it was reported that China-based Sanan Optoelectronics started to build its first micro-LED epitaxial wafer and chip production lineand in early 2019 it was reported that Sanan plans to start sampling Micro LED chips as early as January 2019.

Now Sanan announced that it has signed a contract with the Gedian Economic and Technological Development Zone in China's Hubei Province to setup a 12 billion Yuan ($1.78 billion USD) Mini-LED and Micro-LED production site.